US Patent Issued to WAVEFRONT HOLDINGS on Oct. 27 for "High-bandgap(EG) structure in planar floating-base bipolar phototransistor (PT)" (New Jersey Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,707, issued on Oct. 27, was assigned to WAVEFRONT HOLDINGS LLC (Basking Ridge, N.J.).

"High-bandgap(EG) structure in planar floating-base bipolar phototransistor (PT)" was invented by Jie Yao (Basking Ridge, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor bipolar phototransistor (PT) comprises a floating base consisting of a base (b) electrically coupled only to (i) an emitter (e) via an emitter junction (ej); and (ii) a collector (c) via a collector junction (cj) conductively, capacitively or inductively. A substantially planar semiconductor interface is formed between the semiconductor and a dielectric. A semiconductor volume o...