US Patent Issued to Vishay Siliconix on June 16 for "MOSFET device" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,299, issued on June 16, was assigned to Vishay Siliconix LLC (San Jose, Calif.).

"MOSFET device" was invented by Ayman Shibib (San Jose, Calif.), Misbah Azam (San Jose, Calif.) and Jinman Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods, including metal oxide silicon field effect transistor (MOSFET) devices and methods. The semiconductor device, such as a MOSFET, includes two source regions; a drain region; two body regions, and a buffer region. Each of the two body regions contacts a different one of the two source regions. The buffer region is located between the two body regions, and conta...