US Patent Issued to Virginia Tech Intellectual Properties on April 21 for "Termination structures for semiconductor devices" (Virginia Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,764, issued on April 21, was assigned to Virginia Tech Intellectual Properties Inc. (Blacksburg, Va.).

"Termination structures for semiconductor devices" was invented by Yuhao Zhang (Blacksburg, Va.) and Ming Xiao (Blacksburg, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for forming a device can include forming a first semiconductor region having a first conductivity type. The process can include depositing a dielectric layer over the first semiconductor region, the dielectric layer having a first etch rate. The process can include forming a first photoresist layer having a second etch rate that is greater than the first etch rate o...