US Patent Issued to Versum Materials US on May 26 for "Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,616, issued on May 26, was assigned to Versum Materials US LLC (Tempe, Ariz.).

"Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device" was invented by Wen Dar Liu (Chupei City, Taiwan), Yi-Chia Lee (Chupei City, Taiwan) and Aiping Wu (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed and claimed subject matter pertains to an etching solution including (i) water, (ii) at least one oxidizer, (iii) at least one fluoride ion source, (iv) at least one polyfunctional acid; (v) at least one corrosion inhibiting surfactant, (vi) at leas...