ALEXANDRIA, Va., March 31 -- United States Patent no. 12,590,374, issued on March 31, was assigned to Versum Materials US LLC (Tempe, Ariz.).

"Selective thermal atomic layer etching" was invented by Ravindra Kanjolia (North Andover, Mass.), Jean-Sebastien Lehn (Winchester, Mass.), Martin E. McBriarty (San Jose, Calif.), Ronald Pearlstein (Carlsbad, Calif.), Jared Leith McWilliams (Royal Oaks, Calif.) and Nguyen Minh Vu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed and claimed subject matter relates to selective thermal atomic layer etching with a novel series of halogen-free organic acids cycled with an oxidant as a co-reactant to etch metals."

The patent was filed on Oct. 1...