US Patent Issued to Veevx on May 12 for "Systems and methods for ensuring high read reliability in pre-programmed memory cells" (Arizona Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,626,742, issued on May 12, was assigned to Veevx Inc. (Mesa, Ariz.).

"Systems and methods for ensuring high read reliability in pre-programmed memory cells" was invented by Doug Smith (Mesa, Ariz.) and Sushil Sakhare (Mesa, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "To increase read reliability margins in read-only MRAM arrays, a complimentary pair of MRAM cells includes a first MRAM cell having a first resistance value within a first "high" resistance range RH and storing a logic "HI" value and a second "shorted" MRAM cell having a second resistance value within a second "minimal" resistance range Ro and storing a logic "LO" value. During manu...