US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Sept. 22 for "Electrostatic discharge protection circuit" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,377, issued on Sept. 22, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Electrostatic discharge protection circuit" was invented by Yeh-Jen Huang (Hsinchu City, Taiwan), Jian-Hsing Lee (Hsinchu City, Taiwan), Li-Yang Hong (Kaohsiung City, Taiwan) and Yeh-Ning Jou (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge (ESD) protection circuit protecting a core circuit and including a first high electron mobility transistor (HEMT), a second HEMT, a first current clamping circuit, a second current clamping circuit, and a resistor is provided. The first HEMT is coupled to a first ...