US Patent Issued to Vanguard International Semiconductor on Sept. 1 for "Semiconductor device with gettering sites and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,446, issued on Sept. 1, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"Semiconductor device with gettering sites and method of manufacturing the same" was invented by Chrong-Jung Lin (Hsinchu, Taiwan), Chia-Shen Liu (Hsinchu, Taiwan) and Wen-Hua Wen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating base layer, a semiconductor layer, an insulating layer, an isolation trench and a gettering site. The semiconductor layer and the insulating layer are disposed on the insulating base layer in sequence, and the isolation trench is disposed in the semiconductor layer...