US Patent Issued to Vanguard International Semiconductor on Sept. 1 for "High electron mobility transistor and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,228, issued on Sept. 1, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"High electron mobility transistor and fabrication method thereof" was invented by Chen-Dong Tzou (Taipei City, Taiwan), Wei-Chih Cheng (Tainan City, Taiwan) and Chia-Hao Lee (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor includes a semiconductor channel layer and a semiconductor barrier layer disposed on a substrate in sequence. A source electrode and a drain electrode are disposed on the semiconductor channel layer. A semiconductor cap layer is disposed on the semiconductor barrier layer....