US Patent Issued to Vanguard International Semiconductor on May 19 for "Semiconductor device integrating a high electron mobility transistor and a resistor" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,169, issued on May 19, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"Semiconductor device integrating a high electron mobility transistor and a resistor" was invented by Li-Fan Chen (Hsinchu City, Taiwan), Shao-Chang Huang (Hsinchu City, Taiwan) and Jian-Hsing Lee (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a high electron mobility transistor (HEMT) disposed in an annular active element region, and a resistor disposed in a passive element region surrounded by the annular active element region. The HEM includes a first portion of a compound semiconductor barrier ...