ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,413, issued on May 12, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Yu-Hao Ho (Hsinchu City, Taiwan) and Cheng-Tsung Wu (Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an epitaxial layer disposed on a substrate, which both have a first conductivity type. A first well region having a second conductivity type is disposed in the epitaxial layer. A gate is disposed on the first well region. A source contact region and a drain contact region both having the first conductivity type are disposed in the first well region. A second well ...