US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on March 24 for "Semiconductor structure and manufacturing method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,235, issued on March 24, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor structure and manufacturing method of the same" was invented by Hsiu-Mei Yu (Hsinchu City, Taiwan), Guang-Yuan Jiang (Hsinchu City, Taiwan), Cheng-Yi Hsieh (Jhubei City, Taiwan), Wei-Chan Chang (Taoyuan City, Taiwan) and Chang-Sheng Lin (Jhunan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a lead frame and a sub-substrate disposed on the lead frame, wherein the thickness of the sub-substrate is between 0 and 0.5 micro metre. The semiconduct...