US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on June 30 for "Electrostatic discharge protection device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,304, issued on June 30, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Electrostatic discharge protection device" was invented by Ting-Yu Chang (Zhubei City, Taiwan), Jian-Hsing Lee (Hsinchu City, Taiwan), Yeh-Ning Jou (Hsinchu City, Taiwan), Chieh-Yao Chuang (Kaohsiung City, Taiwan) and Hsien-Feng Liao (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes an N-type deep well region (DNW), first and second high-voltage P- and N-type well regions (first and second HVPW and HVNW), a low-voltag...