US Patent Issued to Vanguard International Semiconductor on June 16 for "Trench metal-oxide-semiconductor device with self-aligned contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,282, issued on June 16, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"Trench metal-oxide-semiconductor device with self-aligned contacts" was invented by Po-Hsiang Liao (New Taipei City, Taiwan), Sheng-Wei Fu (Taoyuan City, Taiwan) and Chung-Yeh Lee (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a body region on the substrate, a source region on the body region, a first trench electrode passing through the source region, the body region and a portion of the substrate, a first dielectric cap layer, a first dielectric liner and a conductive layer. The...