US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on July 21 for "Semiconductor device with split-gate and method forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,229, issued on July 21, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor device with split-gate and method forming the same" was invented by Syed-Sarwar Imam (Hsinchu City, Taiwan) and Chia-Hao Lee (Jhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, including: a substrate having a first conductive type, an epitaxial layer disposed on the substrate, a doped region disposed in the epitaxial layer, and a gate electrode disposed through the doped region and extending into the epitaxial layer. The epitaxial layer has the first conductive type, and the doped region has a s...