US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Aug. 4 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,727, issued on Aug. 4, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Chen-Dong Tzou (Taipei City, Taiwan), Yun-Kai Lai (Taichung City, Taiwan), Chih-Cherng Liao (Zhudong Township, Taiwan) and Chia-Hao Lee (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a substrate, an epitaxial layer, a well region, an insulating structure, an upper electrode layer, and a lower electrode layer. The substrate has the first conductivity type. The epitaxial layer is dispo...