US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Aug. 25 for "Electrostatic discharge (ESD) protection device and transistor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,825, issued on Aug. 25, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Electrostatic discharge (ESD) protection device and transistor structure" was invented by Ting-Yu Chang (Zhubei City, Taiwan), Yeh-Ning Jou (Hsinchu City, Taiwan), Jian-Hsing Lee (Hsinchu City, Taiwan), Chieh-Yao Chuang (Kaohsiung City, Taiwan) and Hsien-Feng Liao (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge (ESD) protection device is provided. A deep-well region is formed on a substrate. A first well region, a second well region, a third well region, and a fourth well region are formed on the dee...