US Patent Issued to UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA on Oct. 27 for "Vertical gallium oxide transistor and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,726, issued on Oct. 27, was assigned to UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (Hefei, China).

"Vertical gallium oxide transistor and preparation method thereof" was invented by Xuanze Zhou (Hefei, China), Guangwei Xu (Hefei, China) and Shibing Long (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical gallium oxide transistor and a preparation method thereof. The method includes: annealing a gallium oxide material in an oxygen atmosphere at a range of temperature of 1000 to 1400deg C. for 1 to 24 h so as to form a single crystal layer, a defective layer and an oxidized layer; removing the defective layer and the oxidized la...