US Patent Issued to University of Kansas on July 14 for "Atomically tuned ultrathin memristors" (Kansas Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,034, issued on July 14, was assigned to University of Kansas (Lawrence, Kan.).

"Atomically tuned ultrathin memristors" was invented by Judy Z. Wu (Lawrence, Kan.) and Ryan W. Goul (Topeka, Kan.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memristors are provided, which, in embodiments, comprise a bottom electrode; a top electrode in electrical communication with the bottom electrode, wherein one or both of the bottom and top electrodes is a Schottky electrode; and a dielectric stack between the bottom and top electrodes, the dielectric stack forming a top interface with a bottom surface of the top electrode and a bottom interface with a top surfac...