US Patent Issued to University of Electronic Science and Technology of China on May 5 for "Lateral power semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,016, issued on May 5, was assigned to University of Electronic Science and Technology of China (Chengdu, China).

"Lateral power semiconductor device" was invented by Ming Qiao (Chengdu, China), Yue Gao (Chengdu, China), Jiawei Wang (Chengdu, China), Dingxiang Ma (Chengdu, China) and Bo Zhang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lateral power semiconductor device is provided and includes a second doping type substrate, a first doping type buried layer, a second doping type epitaxial layer, a first doping type drift area, a second doping type first body area, a first doping type drain area, a first doping type source area, a ...