US Patent Issued to University of Delaware on Nov. 3 for "Semiconductor device and fabrication methods thereof" (Chinese, American Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,329, issued on Nov. 3, was assigned to University of Delaware (Newark, Del.).

"Semiconductor device and fabrication methods thereof" was invented by Peng Cui (Jinan, China) and Yuping Zeng (Newark, Del.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and fabricating method thereof is disclosed. The method comprises depositing epitaxial layers over a silicon substrate to form a semiconductor layer surface; forming at least one mesa portion on the semiconductor layer surface; depositing a metal stack on the semiconductor layer surface; subjecting the semiconductor layer surface to a rapid thermal annealing system for a two-step oh...