US Patent Issued to United Semiconductor (Xiamen) on Oct. 27 for "Semiconductor transistor device including a plurality of dummy bodies within metal gate structure and method of fabricating the same" (Taiwanese, Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,697, issued on Oct. 27, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China).

"Semiconductor transistor device including a plurality of dummy bodies within metal gate structure and method of fabricating the same" was invented by Wei-Chun Chang (Taichung City, Taiwan), You-Di Jhang (New Taipei City, Taiwan), Han-Min Huang (Shamen City, China), Chin-Chun Huang (Hsinchu County, Taiwan) and Wen Yi Tan (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of fabricating the same, the semiconductor device includes a substrate, a metal gate structure, at least one dummy body, two source/drain regi...