US Patent Issued to United Semiconductor (Xiamen) on March 31 for "Resistive random access memory structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,624, issued on March 31, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China).

"Resistive random access memory structure and manufacturing method thereof" was invented by Weikun Lin (Shamen, China) and Wen Yi Tan (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a resistive random access memory (RRAM) structure, which comprises a lower electrode located on a substrate, a resistance switching layer located on the lower electrode, and an upper electrode located on the resistance switching layer, the resistive random access memory structure has a flat top surface and two inclined sidewalls as viewed...