US Patent Issued to UNITED MICROELECTRONICS on Sept. 29 for "Static random access memory and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,527, issued on Sept. 29, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Static random access memory and manufacturing method thereof" was invented by Chun-Cheng Lin (Kaohsiung City, Taiwan), Chun-Hsien Huang (Tainan City, Taiwan), Jun-Jie Wang (Changhua County, Taiwan) and Yu-Tse Kuo (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a static random access memory, which includes at least a first pull-up transistor (PU1), a first pull-down transistor (PD1), a second pull-up transistor (PU2), a second pull-down transistor (PD2), a first access transistor (PG1), a second access transisto...