US Patent Issued to UNITED MICROELECTRONICS on Sept. 22 for "Semiconductor transistor structure and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,443, issued on Sept. 22, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor transistor structure and fabrication method thereof" was invented by Kuan-Liang Liu (Hsinchu County, Taiwan) and Szu-Han Huang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor transistor structure includes a semiconductor substrate having an active area and a trench isolation region surrounding the active area; a first inter-layer dielectric (ILD) layer covering the semiconductor substrate; a metal gate embedded in the first ILD layer and overlying the active area and the trench isolation region, wher...