ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,237, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Kuo-Hsing Lee (Hsinchu County, Taiwan), Chun-Hsien Lin (Tainan City, Taiwan), Yung-Chen Chiu (Taichung City, Taiwan), Sheng-Yuan Hsueh (Tainan City, Taiwan) and Chi-Horn Pai (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of first providing a substrate having a resistor region, forming a first gate structure on the resistor region, forming a first interlayer dielectric (ILD) layer around the first...