US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Layout pattern of static random-access memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,140, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Layout pattern of static random-access memory" was invented by Po-Lin Chen (Tainan City, Taiwan), Tsung-Hsun Wu (Kaohsiung City, Taiwan), Liang-Wei Chiu (Tainan City, Taiwan) and Yao-Chin Cheng (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A layout pattern of static random-access memory (SRAM) includes a substrate, a plurality of diffusion regions and a plurality of gate structures are located on the substrate, each diffusion region includes a first diffusion region, a second diffusion region, a third diffusion region, a fourth diff...