ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,193, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"FinFET LDMOS device" was invented by Yi Chuen Eng (Tainan City, Taiwan), Tzu-Feng Chang (Tainan City, Taiwan), Teng-Chuan Hu (Tainan City, Taiwan), Yi-Wen Chen (Tainan City, Taiwan) and Yu-Hsiang Lin (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A FinFET LDMOS device includes a semiconductor substrate; juxtaposed first well and second well in the semiconductor substrate; semiconductor fins extending on the semiconductor substrate along a first direction, the semiconductor fins including a first fin portion in the first well and a...