US Patent Issued to UNITED MICROELECTRONICS on May 5 for "Static random access memory and its layout pattern" (Taiwanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,974, issued on May 5, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Static random access memory and its layout pattern" was invented by Shu-Wei Yeh (Taichung City, Taiwan) and Chang-Hung Chen (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a layout pattern of static random access memory, which comprises a plurality of fin structures on a substrate, a plurality of gate structures on the substrate and spanning the fin structures to form a plurality of transistors distributed on the substrate. The transistors include a first pull-up transistor (PU1), a first pull-down transistor (PD1), ...