US Patent Issued to UNITED MICROELECTRONICS on May 26 for "Magnetic memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,642,006, issued on May 26, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Magnetic memory device" was invented by Kuan-Hsiang Chen (Nantou County, Taiwan), Yi-Ching Wang (Taichung City, Taiwan), Wei Chen (Tainan City, Taiwan), Chia-Fu Cheng (Taipei City, Taiwan) and Chun-Yao Yang (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a magnetic tunneling junction (MTJ) stack and a capping layer on the MTJ stack. The MTJ stack includes a reference layer, a tunneling barrier layer on the reference layer, and a free layer on the tunneling barrier layer. The capping layer includes a m...