ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,366, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Semiconductor device and method for fabricating the same" was invented by Chih-Wei Yang (Tainan City, Taiwan), Ssu-I Fu (Kaohsiung City, Taiwan), Chih-Kai Hsu (Tainan City, Taiwan) and Chun-Hsien Lin (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of providing a substrate having a high-voltage (HV) region and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first gate structure ...