ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,339, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Resistor between dummy flash structures" was invented by Weichang Liu (Singapore), Wang Xiang (Singapore), Chia Ching Hsu (Singapore), Yung-Lin Tseng (Changhua County, Taiwan) and Shen-De Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A resistor between dummy flash structures includes a substrate. The substrate includes a resistor region and a flash region. A first dummy memory gate structure and a second dummy memory gate structure are disposed within the resistor region of the substrate. A polysilicon resistor is disposed betw...