US Patent Issued to UNITED MICROELECTRONICS on May 12 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,364, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"High electron mobility transistor and method for fabricating the same" was invented by Chun-Ming Chang (Kaohsiung City, Taiwan), Che-Hung Huang (Hsinchu City, Taiwan), Wen-Jung Liao (Hsinchu City, Taiwan) and Chun-Liang Hou (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and th...