US Patent Issued to UNITED MICROELECTRONICS on March 31 for "Deposition of gate lines and gate line extensions on a semiconductor substrate" (Singaporean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,470, issued on March 31, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Deposition of gate lines and gate line extensions on a semiconductor substrate" was invented by Purakh Raj Verma (Singapore), Su Xing (Singapore) and Jinyu Liao (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having an active area, a first gate line extending along a first direction on the active area, a first gate line extension adjacent to the first gate line and outside the active area, a second gate line extending along the first direction on the active area and adjacent to the first gate line, a...