ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,653, issued on March 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor device and fabrication method thereof" was invented by Po-Yu Yang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention discloses a semiconductor device comprising a first transistor and a second transistor, wherein the first transistor and the first transistor are separated by an air gap. The first transistor includes a first fin structure including a first source, a first drain, and a first channel. The second transistor includes a second fin structure including a second source, a second drain, and a second cha...