ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,576, issued on June 30, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).
"Semiconductor structure and manufacturing method thereof" was invented by Chin-Chia Yang (Tainan City, Taiwan), Da-Jun Lin (Kaohsiung City, Taiwan), Fu-Yu Tsai (Tainan City, Taiwan) and Bin-Siang Tsai (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a first substrate, a first dielectric layer, a first oxygen doped carbide (ODC) bonding layer, a second substrate, a second dielectric layer, and a second ODC bonding layer is provided. The first dielectric layer is located on the first substrate. The first ...