US Patent Issued to United Microelectronics on June 30 for "FinFET device with extra body portion and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,307, issued on June 30, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"FinFET device with extra body portion and method of forming the same" was invented by Yi Chuen Eng (Tainan City, Taiwan), Tzu-Feng Chang (Tainan City, Taiwan), Teng-Chuan Hu (Tainan City, Taiwan), Yi-Wen Chen (Tainan City, Taiwan) and Yu-Hsiang Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, including a substrate, a first source/drain region, a second source/drain region, and a gate structure, is provided. The substrate has an extra body portion and a fin protruding from a top surface of the substrate, wherein...