US Patent Issued to UNITED MICROELECTRONICS on June 23 for "Semiconductor structure with flush shallow trench isolation and gate oxide and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,686, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor structure with flush shallow trench isolation and gate oxide and method of manufacturing the same" was invented by Ta-Wei Chiu (Changhua County, Taiwan), Ping-Hung Chiang (Tainan City, Taiwan), Chia-Ling Wang (Tainan City, Taiwan), Wei-Lun Huang (Tainan City, Taiwan), Chia-Wen Lu (Tainan City, Taiwan) and Yueh-Chang Lin (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure with flush shallow trench isolation and gate oxide, including performing a first etching process to remov...