ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,508, issued on June 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Magnetoresistive random access memory" was invented by Hui-Lin Wang (Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a bottom electrode on a substrate, a magnetic tunneling junction (MTJ) on the bottom electrode, a first cap layer on the MTJ, a second cap layer on the first cap layer, a block layer on the second cap layer, and a top electrode on the block layer. Preferably, the block layer could be made of Co-based alloy or metal nitride, in which the Co-based alloy could further include CoW alloy whereas...