US Patent Issued to United Microelectronics on July 14 for "Static random access memory including three-dimensional diodes" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,751, issued on July 14, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Static random access memory including three-dimensional diodes" was invented by Hsin-Hsien Chen (New Taipei City, Taiwan), Sheng-Yuan Hsueh (Tainan City, Taiwan), Chih-Kai Kang (Tainan City, Taiwan) and Kuo-Hsing Lee (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random access memory (SRAM) includes a first memory cell. The first memory cell includes: a first pull-down transistor, a first pull-up transistor, a second pull-up transistor, and a second pull-down transistor arranged on a first segment of a first fin, a first segment...