ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,141, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor structure and fabrication method thereof" was invented by Da-Jun Lin (Kaohsiung City, Taiwan), Chih-Wei Chang (Tainan City, Taiwan), Fu-Yu Tsai (Tainan City, Taiwan) and Bin-Siang Tsai (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate; a first dielectric layer on the substrate; an etch stop layer on the first dielectric layer; a second dielectric layer on the etch stop layer; a first conductor and a second conductor in the second dielectric layer, an air gap in the second d...