US Patent Issued to UNITED MICROELECTRONICS on July 14 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,787, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Chang-Yih Chen (Tainan City, Taiwan), Kuo-Hsing Lee (Hsinchu County, Taiwan) and Chun-Hsien Lin (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region, forming a first fin-shaped structure on the MOSCAP region, forming a doped layer on the substrate of the non-MOSCAP region and the ...