US Patent Issued to UNITED MICROELECTRONICS on July 14 for "High electron mobility transistor and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,796, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"High electron mobility transistor and method for forming the same" was invented by Po-Yu Yang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a gate structure on the barrier layer, a gate spacer on the gate structure, and a gate contact on the gate spacer. The gate contact includes a first portion and a second portion respectively at two sides of the gate spacer and directly contacting the gate struc...