ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,331, issued on Feb. 17, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).
"Transistor structure" was invented by Hsuan-Kai Chen (Taichung, Taiwan), Tun-Jen Cheng (Hsinchu, Taiwan), Ching-Chung Yang (Hsinchu, Taiwan), Nien-Chung Li (Hsinchu, Taiwan), Wen-Fang Lee (Hsinchu, Taiwan) and Chiu-Te Lee (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure including a substrate, a gate dielectric layer, a gate, a first doped region, a second doped region, a first drift region, and a dummy gate is provided. The gate dielectric layer is located on the substrate. The gate dielectric layer includes first an...