US Patent Issued to UNITED MICROELECTRONICS on Feb. 17 for "RRAM and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,562, issued on Feb. 17, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"RRAM and fabricating method of the same" was invented by Wen-Jen Wang (Tainan, Taiwan), Yu-Huan Yeh (Hsinchu, Taiwan) and Chuan-Fu Wang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An RRAM includes a bottom electrode, a resistive switching layer, a top electrode and a cap layer stacked from bottom to top. The cap layer includes a top surface. A first spacer contacts a first sidewall of the bottom electrode, and a second sidewall of the resistive switching layer. A second spacer contacts the first spacer and contacts a third spacer of t...