ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,703, issued on Aug. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsinchu, Taiwan).

"Semiconductor structure and method for fabricating the same" was invented by Kai-Kuen Chang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate and a first switch element disposed in a first device area of the substrate. The first switch element includes a channel region, a first gate dielectric layer, a first gate layer and a source/drain region. The channel region is disposed at the bottom of a recess in the first device area. The first gate dielectric layer has a first region and a second region...