US Patent Issued to UNITED MICROELECTRONICS on Aug. 11 for "Resistive random access memory device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,900, issued on Aug. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsinchu, Taiwan).

"Resistive random access memory device and method for fabricating the same" was invented by Kai-Jiun Chang (Taoyuan City, Taiwan), Yu-Huan Yeh (Hsinchu City, Taiwan) and Chuan-Fu Wang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ReRAM device includes an interlayer dielectric (ILD), a lower conductive plug, a resistance-switching element (RSE) and an upper conductive plug. The ILD has an upper surface. The lower conductive plug is disposed in the ILD, and has a top surface lower than the upper surface. The RSE is disposed above the top ...