ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,902, issued on Aug. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Resistive random-access memory device" was invented by Chia-Ching Hsu (Yunlin County, Taiwan), Wang Xiang (Singapore) and Shen-De Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A RRAM (resistive random-access memory) device includes a bottom electrode line directly on a first metal structure, a top electrode island disposed beside the bottom electrode line, a resistive material sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island, and a cap layer covering a portion of the first metal...