ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,139, issued on Aug. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Layout pattern for static random access memory" was invented by Chun-Hsien Huang (Tainan City, Taiwan), Yu-Tse Kuo (Tainan City, Taiwan), Shu-Ru Wang (Taichung City, Taiwan), Li-Ping Huang (Miaoli County, Taiwan) and Chun-Yen Tseng (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a layout pattern of static random access memory (SRAM), which comprises a substrate, and a plurality of fin structures and a plurality of gate structures are located on the substrate to form a plurality of transistors. The plurality of tr...