US Patent Issued to UNITED MICROELECTRONICS on April 21 for "Electrostatic discharge protection circuit using GaN-based devices" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,527, issued on April 21, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Electrostatic discharge protection circuit using GaN-based devices" was invented by Yu-Hsuan Chang (New Taipei City, Taiwan), Ching-Wei Li (Hsinchu City, Taiwan), Jih-San Lee (Hsinchu City, Taiwan) and Tien-Hao Tang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ESD protection circuit using GaN devices, with a ESD protection block including a first 2DEG resistor with one terminal coupled to a reference voltage, a first trigger with one terminal coupled to the another terminal of the first 2DEG resistor and with another terminal ...